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AON4420L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications.
Features
VDS (V) = 30V ID = 10A RDS(ON) < 19m RDS(ON) < 25m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current Continuous Drain Current A Power Dissipation
A C
Maximum 30 20 50 10 8 1.6 1 -55 to 150
Units V V
IDM ID PD TJ, TSTG
TA=25C TA=70C TA=25C TA=70C
A W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 34 66 20
Max 40 80 25
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID = 250A, VGS = 0V VDS = 30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 20V VDS = VGS ID = 250A VGS = 10V, VDS = 5V VGS = 10V, ID = 10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = 4.5V, ID = 8A Forward Transconductance VDS = 5V, ID = 10A IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current 440 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 35 2 8 VGS=10V, VDS=15V, ID=10A 4 1.5 1.3 VGS=10V, VDS=15V, RL=1.5, RGEN=3 IF=10A, dI/dt=300A/s 8 11 TJ=125C 1.4 50 16 27 21 30 0.75 1 3 550 110 55 4 9.8 4.6 1.8 2.2 5 3.2 24 6 11 13 14 16 660 140 80 6 12 5.5 2.2 3 26 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC 20 m 1.9 Min 30 1 5 100 2.5 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev0: July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 10V 40 30 ID (A) 20 VGS=3V 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 30 Normalized On-Resistance 1.8 1.6 1.4 1.2 1.0 0.8 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID=10A 1E+01 1E+00 1E-01 IS (A) 1E-02 125C VGS=10V ID=10A VGS=4.5V ID=8A 10 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 4.5V 4V 3.5V ID(A) 40 30 20 25C 125C 50 VDS=5V
25 RDS(ON) (m)
VGS=4.5V
20
15 VGS=10V 10 0 2 4
IF=-6.5A, 8 dI/dt=100A/s 6 10
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 RDS(ON) (m) 40
125C 1E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25C 25C OUT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 800 VDS=15V ID=10A Capacitance (pF) 600 Ciss
400 Coss
200 Crss 0
0
5
10
15
20
25
30
VDS (Volts) Figure 8: Capacitance Characteristics
100 RDS(ON) limited 10s 100s 1ms 10ms 100ms 0.1 TJ(Max)=150C TA=25C DC 10s
1000
TJ(Max)=150C TA=25C
10 ID (Amps)
1
Power (W)
100
10
0.01 0.1 1
IF=-6.5A, dI/dt=100A/s 10 100
VDS (Volts)
1 0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=80C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
td(on) ton tr td(off) toff tf
90%
10%
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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